PART |
Description |
Maker |
EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位) 256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
K9F4G08U0M K9K8G08U1M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
|
Samsung Electronic Samsung semiconductor
|
K9F4G08U1M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
|
Samsung semiconductor
|
EN27LN2G08 |
2 Gigabit (256M x 8), 3.3 V NAND Flash Memory
|
Eon Silicon Solution In...
|
TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位)的CMOS闪存 32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp. Toshiba Corporation
|
EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
EDD2516AKTA-E |
256M bits DDR SDRAM (16M words x16 bits DDR400)
|
Elpida Memory
|
EDD2508AKTA-5B-E EDD2508AKTA-5C-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
Elpida Memory, Inc.
|
EDD2504AKTA-6B-E EDD2504AKTA-7B-E |
256M bits DDR SDRAM (64M words x 4 bits)
|
Elpida Memory, Inc.
|
EDS2732AABH-75L-E EDS2732AABH-75 EDS2732AABH-75-E |
256M bits SDRAM (8M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
EDS2532EEBH-9A-E EDS2532EEBH-9A |
256M bits SDRAM (8M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
EDS2532AABH-6BL-E EDS2532AABH-6B EDS2532AABH-6B-E |
256M bits SDRAM (8M words x 32 bits)
|
ELPIDA[Elpida Memory]
|